Super junction MOS is a power MOS structural design. Its working principle is based on forming a staggered N-type and P-type nodes in the channel area to achieve lower on-resistance and higher voltage withstand capability, providing more High efficiency and reliability. Often used in high power applications such as power supplies and drives.
SGT MOSFET is a new type of power semiconductor device. Compared with traditional deep trench MOSFET,
Not only does it also have the advantage of low conduction loss, it also has lower switching loss. Its structure and process manufacturing method do not require the growth of a thick shielding electrode dielectric layer in the trench. At the same time, Bsg has good high-temperature reflow characteristics and good trench filling capabilities. The same can be achieved by using an epitaxial wafer with a higher doping concentration. breakdown voltage, reducing device Rsp and enhancing market competitiveness. SGT MOSFET is commonly used as a switching device and is mainly used in new energy trams, new photovoltaic power generation, energy-saving home appliances and other fields.
Trench MOS transistors have the lowest on-state resistance during operation and have more advantages in performance than planar MOS transistors. Therefore, they are considered to be the most suitable power devices for medium and low-voltage power supply applications. It has the advantages of high speed, high performance, low loss, low on-resistance, small package, etc., and is widely used in switching control, regulated power supply and other fields.
Planar mosfet is a common field effect transistor with the advantages of high efficiency, high reliability, and low energy consumption. Compared with other MOSFETs, the structure is simpler and easier to manufacture. Because of its low conductive resistance and high switching speed, it performs well in high-frequency applications; it uses oxide layer isolation technology to effectively avoid direct contact between the metal gate and the semiconductor, thereby improving the reliability and stability of the device. It is mostly used in various fields such as power supply, drive, lighting and so on.
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